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| STP80NF06 - STB80NF06 STW80NF06 N-CHANNEL 60V - 0.0065 - 80A TO-220/D2PAK/TO-247 STripFETTM II POWER MOSFET TYPE STB80NF06 STP80NF06 STW80NF06 s s s s VDSS 60 V 60 V 60 V RDS(on) < 0.010 < 0.010 < 0.010 ID 80 A 80 A 80 A 3 1 2 1 2 3 TYPICAL RDS(on) = 0.0065 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE TO-220 3 1 TO-247 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-AC & DC-DC CONVERTERS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS ORDER CODES PART NUMBER STB80NF06T4 STP80NF06 STW80NF06 MARKING B80NF06 P80NF06 W80NF06 PACKAGE D2PAK TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE March 2004 1/10 STP80NF06 - STB80NF06 - STW80NF06 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (*) ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 20 80 80 320 300 2 870 -65 to 175 175 Unit V V V A A A W W/C mJ C C (q) Pulse width limited by safe operating area (1) Starting Tj = 25C, ID = 40A, VDD = 40V (*) Current Limited by wire bonding THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.5 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 60 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 40 A Min. 2 Typ. 3 0.0065 Max. 4 0.010 Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > 2.5 V, ID =18 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 20 3850 800 250 Max. Unit S pF pF pF 2/10 STP80NF06 - STB80NF06 - STW80NF06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 27V, ID = 40A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 80V, ID = 80A, VGS = 10V Min. Typ. 25 85 115 24 46 150 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf td(off) tf tc Parameter Turn-off-Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 27V, ID = 40A, RG = 4.7, VGS = 10V (see test circuit, Figure 3) Vclamp =44V, ID =80A RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 70 25 85 75 110 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80A, VGS = 0 ISD = 80A, di/dt = 100A/s, VDD = 50V, Tj = 150C (see test circuit, Figure 5) 80 250 6.4 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10 STP80NF06 - STB80NF06 - STW80NF06 Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STP80NF06 - STB80NF06 - STW80NF06 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics NormalizedBreakdownVoltage vs Temperature 5/10 STP80NF06 - STB80NF06 - STW80NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP80NF06 - STB80NF06 - STW80NF06 TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q 7/10 STP80NF06 - STB80NF06 - STW80NF06 D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 8/10 3 1 STP80NF06 - STB80NF06 - STW80NF06 TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 9/10 STP80NF06 - STB80NF06 - STW80NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10 |
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